An international group has tried to use indium sulfide as an electron transport material in a perovskite solar cell. The result is a device with a lower failure rate and better performance.
Scientists used a numerical module and SCAPS-1D sun- cell capacitance dance phardwarewhich is a simulation tool for thin film solar cells developed by Ghent University in Belgium, simulate s solar cell based a type of lead halide perovskite known as methylammonium lead iodide (MAPbI3).
“In2S3 is an n-type semiconductor with excellent carrier mobility, non-toxicity, sufficient bandgap, tunable electrical properties and good thermal resistance, all of which are ideal for ETM applications in solar cells,” it stressed.
The team designed a cell with a substrate made of fluorine-doped tin oxide (FTO), a new ETL, MAPbI3 suppressor, a spiro-OMeTAD hole transport layer, and a gold (Au) metal contact. According to the simulation, the thickness of the ideal absorber should be 0.7 µm, which is said to maximize the light flux and minimize recombination.
Solar cell achieved 20.15% power conversion efficiency, breakdown voltage 1.089 V, short circuit current 24.18 mA/cm2and a fill factor of 76.45%. “Overall, the solar cell performed better between 20 C and 30 C, and its efficiency drops rapidly above this temperature,” the researchers noted.
They presented the cell technology in a study published in 2010 “Insights into the photovoltaic properties of indium sulfide as perovskite as an electron transport material for solar cells”. Scientific reportsThis study paves the way for the practical implementation of indium sulfide as a potential ETL for MAPbI3 perovskite solar cells,” they concluded.
The group includes researchers from Cornell University in the US, Warith Al-Anbiya University in Iraq, GLA University in India, INTI International University in Malaysia, the Atomic Energy Research Institute of Bangladesh and King Fahd University of Petroleum and Minerals. in Saudi Arabia.
