Chinese researchers have built a perovskite solar cell with a 2D/3D heterojunction architecture. The breakdown voltage of the device is 1.19 V, the short-circuit current is 25.21 mA cm−2 and the fill factor is 82.61%.
Perovskite cells built from 2D hybrid materials are generally more stable than conventional 3D devices due to the protection provided by organic ligands. They usually have large exciton binding energies.
“This work has achieved orientation control of polycrystalline perovskite thin films for the first time and prepared high-quality perovskite thin films and high-power oriented devices,” researcher Zhike Liu said. pv magazine.
The academics built the cell using a 2D/3D heterojunction architecture. The device has a substrate that is made of tin oxide (FTO), titanium oxide (TiO2) electron transport layer, perovskite layer deposited on top diaminobenzidine (DAB) film via spin coating, spiro-OMeTAD hole transport layer, and metal contact.
The researchers said that the DAB film can be modified motherphysiology of perovskite films.
“DAB modification on the bottom and top surface of the perovskeit film can significantly passivate and reduce defects, so reduces the non-radiative recombination loss in the perovskite film,” they explained.
The solar cell’s power conversion efficiency is 24.83%, breakdown voltage 1.19 V, short-circuit current 25.21 mA cm−2 and a fill factor of 82.61%.
“Non-encapsulated devices retain 95% and 89% of their original effectiveness after storage in ambient air for 1,650 hours or heated to 85 °C C 500 hours, i.etightly, and the encapsulated device lasts 88% of the original PCE after MPP monitoring for 200 hours in continuous illuminationthe Chinese group said.
They presented the cell in the paper “Orientation Engineering via 2D Seeding for Stable 24.83% Efficiency Perovskite Solar Cells” published recently Advanced energy materials.
“This paper has a good reference value for controlling other perovskite trends and promoting the commercialization of efficient perovskite cells,” Liu said.